NPN wideband silicon RF transistor

General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Features and benefits ■ Low noise high gain microwave transistor ■ Noise figure (NF) = 1.7 dB at 5.8 GHz ■ High associated gain 13.5 dB at 5.8 GHz ■ 4

文件：134.37 Kbytes 页数：12 Pages

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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NPN wideband silicon RF transistor

文件：134.37 Kbytes 页数：12 Pages

PHI

PHI

NPN宽频带硅RF晶体管

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 40 GHz fT silicon technology\nHigh associated gain 12 dB at 5.8 GHz\nLow noise high gain microwave transistor\nNoise figure (NF) = 1.7 dB at 5.8 GHz;

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