NPN Wideband Silicon RF Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min.) · Low Noise, High Breakdown RF Transistor APPLICATIONS · Applications Requiring High Supply Voltages And High Breakdown Voltages · Low Noise Amplifiers For ISM Applications

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ISC

无锡固电

NPN wideband silicon RF transistor

文件：289.72 Kbytes 页数：21 Pages

恩XP

NPN wideband silicon RF transistor

文件：306.5 Kbytes 页数：22 Pages

PHI

PHI

NPN wideband silicon RF transistor

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PHI

PHI

NPN宽带硅RF晶体管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pindual-emitter SOT143B package.\nThe BFU550X is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.75 dB at 900 MHz\nMaximum stable gain 21.5 dB at 900 MHz\n11 GHz fT silicon technology;

恩XP

NPN宽带硅RF晶体管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pindual-emitter SOT143R package.\nThe BFU550XR is part of the BFU5 family of transistors, suitable for small signal tomedium power applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.7 dB at 900 MHz\nMaximum stable gain 21.5 dB at 900 MHz\n11 GHz fT silicon technology;

恩XP