NPN wideband silicon RF transistor

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PHI

PHI

NPN宽带硅RF晶体管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323package.\nThe BFU550W is part of the BFU5 family of transistors, suitable for small signal tomedium power applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.6 dB at 900 MHz\nMaximum stable gain 18 dB at 900 MHz\n11 GHz fT silicon technology;

恩XP

NPN宽带硅RF晶体管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pindual-emitter SOT143B package.\nThe BFU550X is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.75 dB at 900 MHz\nMaximum stable gain 21.5 dB at 900 MHz\n11 GHz fT silicon technology;

恩XP