丝印：ZC*；Package：SOT323；NPN wideband silicon RF transistor

文件：302.38 Kbytes 页数：22 Pages

恩XP

NPN wideband silicon RF transistor

文件：302.38 Kbytes 页数：22 Pages

PHI

PHI

NPN宽带硅RF晶体管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323package.\nThe BFU550W is part of the BFU5 family of transistors, suitable for small signal tomedium power applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.6 dB at 900 MHz\nMaximum stable gain 18 dB at 900 MHz\n11 GHz fT silicon technology;

恩XP

NPN Wideband Silicon RF Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min.) · Low Noise, High Breakdown RF Transistor APPLICATIONS · Applications Requiring High Supply Voltages And High Breakdown Voltages · Low Noise Amplifiers For ISM Applications

文件：232.24 Kbytes 页数：2 Pages

ISC

无锡固电

Low Pass Filter

文件：194.01 Kbytes 页数：1 Pages

MINI