丝印：TC；Package：SOT143B；NPN wideband silicon RF transistor

General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Features and benefits • Low noise,

文件：289.7 Kbytes 页数：21 Pages

恩XP

NPN宽带硅RF晶体管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pindual-emitter SOT143B package.\nThe BFU550 is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.7 dB at 900 MHz\nMaximum stable gain 21 dB at 900 MHz\n11 GHz fT silicon technology;

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NPN Wideband Silicon RF Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min.) · Low Noise, High Breakdown RF Transistor APPLICATIONS · Applications Requiring High Supply Voltages And High Breakdown Voltages · Low Noise Amplifiers For ISM Applications

文件：232.24 Kbytes 页数：2 Pages

ISC

无锡固电

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文件：306.25 Kbytes 页数：22 Pages

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丝印：HW*；Package：SOT23；NPN wideband silicon RF transistor

文件：300.06 Kbytes 页数：22 Pages

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文件：300.06 Kbytes 页数：22 Pages

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丝印：ZC*；Package：SOT323；NPN wideband silicon RF transistor

文件：302.38 Kbytes 页数：22 Pages

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NPN wideband silicon RF transistor

文件：302.38 Kbytes 页数：22 Pages

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PHI

NPN wideband silicon RF transistor

文件：289.72 Kbytes 页数：21 Pages

恩XP

NPN wideband silicon RF transistor

文件：306.5 Kbytes 页数：22 Pages

PHI

PHI