丝印：RHs；Package：SOT-143；NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

文件：78.74 Kbytes 页数：7 Pages

INFINEON

英飞凌

丝印：RHs；Package：SOT-143；Low Noise Silicon Bipolar RF Transistor

文件：547.27 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

文件：60.37 Kbytes 页数：7 Pages

SIEMENS

西门子

RF & Wireless Control-Low-Noise Si Transistors up to 2.5 GHz

Infineon

英飞凌

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

文件：58.27 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

文件：87.7 Kbytes 页数：7 Pages

INFINEON

英飞凌

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

文件：93.87 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

文件：93.87 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

文件：93.87 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

文件：59.48 Kbytes 页数：7 Pages

SIEMENS

西门子