Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.41685 Mbytes 页数：28 Pages

INFINEON

英飞凌

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.48023 Mbytes 页数：28 Pages

INFINEON

英飞凌

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.48023 Mbytes 页数：28 Pages

INFINEON

英飞凌

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.38547 Mbytes 页数：28 Pages

INFINEON

英飞凌

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.38547 Mbytes 页数：28 Pages

INFINEON

英飞凌

Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

文件：1.41209 Mbytes 页数：26 Pages

INFINEON

英飞凌

Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

文件：1.48 Mbytes 页数：26 Pages

INFINEON

英飞凌

丝印：BFPT；Package：DO-214AB；1500W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 1500W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature sold

文件：2.88766 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：BFPA；Package：DO-214AB；10 To 78V 1500W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1500W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time

文件：2.88759 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：BFPH；Package：DO-214AB；Automotive and High Reliability TVS Diodes

文件：1.0898 Mbytes 页数：5 Pages

YINT

音特电子