RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

Dual NPN wideband transistor

DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers an

文件：96.58 Kbytes 页数：10 Pages

PHI

PHI

NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45 - Line

文件：48.56 Kbytes 页数：8 Pages

SIEMENS

西门子

MINIATURE FUSEHOLDERS

文件：89.37 Kbytes 页数：1 Pages

LITTELFUSE

力特

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

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INTEL

英特尔

횠6.1mm mounting Robust stainless steel housing

文件：423.92 Kbytes 页数：5 Pages

MARL