Dual NPN wideband transistor

DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers an

文件：96.58 Kbytes 页数：10 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

双NPN宽频带晶体管

双晶体管，具有两个硅NPN RF芯片，采用表面贴装6针SOT363 (S-mini)封装。该类晶体管主要设计用于RF前端GHz范围内的宽带应用，比如模拟和数字移动电话、无绳电话、雷达探测器、传呼机和卫星电视调谐器。 双器件\n金属化镀金确保极佳的可靠性\n高增益\n低噪声\n小型封装;

恩XP

NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45 - Line

文件：48.56 Kbytes 页数：8 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage • Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz • High gain and low noise at high frequencies due to high transit frequ

文件：92.84 Kbytes 页数：8 Pages

Infineon

英飞凌

TRANZYSTORY NPN

[UNITRA CEMI] TRANZYSTORY NPN

文件：341.53 Kbytes 页数：4 Pages

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