NPN wideband differential transistor

DESCRIPTION Emitter coupled dual NPN silicon RF transistor in a surface mount 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pager

文件：59.28 Kbytes 页数：8 Pages

PHI

飞利浦

NPN wideband differential transistor

恩XP

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-

文件：146.15 Kbytes 页数：13 Pages

PHI

飞利浦

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21︱ 2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,h

文件：360.25 Kbytes 页数：3 Pages

ISC

无锡固电