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BF823

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件:174.79 Kbytes 页数:2 Pages

DIOTEC

德欧泰克

BF823

PNP high-voltage transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.

文件:105.97 Kbytes 页数:6 Pages

恩XP

恩XP

BF823

丝印:1Y;Package:SOT-23;Small Signal Transistors (PNP)

FEATURES ◆ PNP Silicon Epitaxial Planar Transistors especially suited for application in classB video output stages of TV receivers and monitors. ◆ As complementary types, the NPN transistors BF820 and BF822 are recommended.

文件:49.71 Kbytes 页数:2 Pages

GE

BF823

丝印:1Y;Package:SOT23;PNP high-voltage transistors

FEATURES •Low current (max. 50 mA) •High voltage (max. 300 V). APPLICATIONS •Telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822.

文件:288.64 Kbytes 页数:7 Pages

NEXPERIA

安世

BF824

丝印:F8;Package:SOT23;PNP medium frequency transistor

FEATURES •Low current (max. 25 mA) •Low voltage (max. 30 V). APPLICATIONS •RF stages in FM front-ends in common base configuration. DESCRIPTION PNP medium frequency transistor in a SOT23 plastic package.

文件:282.05 Kbytes 页数:7 Pages

NEXPERIA

安世

BF824

PNP medium frequency transistor

DESCRIPTION PNP medium frequency transistor in a SOT23 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 30 V). APPLICATIONS • RF stages in FM front-ends in common base configuration.

文件:104.8 Kbytes 页数:6 Pages

恩XP

恩XP

BF824

PNP medium frequency transistor

DESCRIPTION PNP medium frequency transistor in a SOT23 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 30 V). APPLICATIONS • RF stages in FM front-ends in common base configuration.

文件:41.68 Kbytes 页数:8 Pages

PHI

PHI

PHI

BF824W

PNP medium frequency transistor

DESCRIPTION PNP medium frequency transistor in a SOT323 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 30 V). APPLICATIONS • RF stages in FM front-ends in common base configuration.

文件:44.3 Kbytes 页数:8 Pages

PHI

PHI

PHI

BF824W

PNP medium frequency transistor

DESCRIPTION PNP medium frequency transistor in a SOT323 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 30 V). APPLICATIONS • RF stages in FM front-ends in common base configuration.

文件:105.67 Kbytes 页数:6 Pages

恩XP

恩XP

BF824W

PNP Medium Frequency Transistor

Features • Low current (max. 25 mA). • Low voltage (max. 30 V).

文件:46.72 Kbytes 页数:1 Pages

KEXIN

科信电子

晶体管资料

  • 型号:

    BF819

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    视频输出 (Vid)_功率放大 (L)_电视 (TV)

  • 封装形式:

    直插封装

  • 极限工作电压:

    300V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BF617,BF859,BF880,BF881,MJE340,

  • 最大耗散功率:

    6W

  • 放大倍数:

  • 图片代号:

    A-83

  • vtest:

    300

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    6

技术参数

  • 输入电压:

    36~75Vdc

  • 输出功率:

    800W

  • 功率范围:

    300W-1KW

  • 输出路数:

    1

  • 尺寸(mm):

    115.6*59.7*12.7

  • 输出范围:

    36-72V

  • 安全符合:

    符合

  • 散热方式:

    集成散热

  • 输出电压1:

    48(24~53)VdcV/0-16.7AA

  • 输出电压2:

    V/A

  • 输出电压3:

    V/A

  • 输出电压4:

    V/A

  • 输出电压5:

    V/A

供应商型号品牌批号封装库存备注价格
龙溢端子
2020+
40000
只做原装,可提供样品
询价
PHI
23+
SOT-23
2870
绝对全新原装!现货!特价!请放心订购!
询价
PHI
24+/25+
2979
原装正品现货库存价优
询价
13+
SOT23
4446
原装分销
询价
恩XP
1215+
SOT-23
150000
全新原装,绝对正品,公司大量现货供应.
询价
恩XP
13+
SOT23
3000
原装现货价格有优势量大可以发货
询价
恩XP
17+
SOT-23
6200
100%原装正品现货
询价
恩XP
24+
SOT-23
5900
原装正品
询价
恩XP
2016+
SOT23-3
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
PHI
26+
SOT-23
6980
原装现货,可开13%税票
询价
更多BF8供应商 更新时间2026-10-15 9:14:00