丝印：1Y；Package：SOT-23；Small Signal Transistors (PNP)

FEATURES ◆ PNP Silicon Epitaxial Planar Transistors especially suited for application in classB video output stages of TV receivers and monitors. ◆ As complementary types, the NPN transistors BF820 and BF822 are recommended.

文件：49.71 Kbytes 页数：2 Pages

GE

GE Industrial Company

丝印：1Y；Package：SOT23；PNP high-voltage transistors

FEATURES •Low current (max. 50 mA) •High voltage (max. 300 V). APPLICATIONS •Telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822.

文件：288.64 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Y；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Low current (max.-50 mA) High voltage (max.-300V) Telephony and professional communication equipment.

文件：1.20702 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：1Y；Package：SOD523；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：221.41 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Y；Package：SOD523；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：222.33 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Y；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：537.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：1Y；Package：SOT89；80 V, 4 A NPN low VCEsat (BISS) transistor

FEATURES •High hFE and low VCEsat at high current operation •High collector current capability: IC maximum 4 A •High efficiency leading to less heat generation. APPLICATIONS •Medium power peripheral drivers; e.g. fan, motor •Strobe flash units for DSC and mobile phones •Inverter applicati

文件：449.46 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Y；Package：DFN2020-6；20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

文件：403.9 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Y；Package：DFN2020MD-6；20 V, single P-channel Trench MOSFET

文件：740.33 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1YXYY；Package：TDFN33-14；1A Linear Li-Ion Battery Charger for Single and Dual Cell Applications

Features • 4.0V ~ 13.2V Input Voltage Range • Compatible with USB or AC Adapter Sources • Programmable Fast Charge Current from 100mA to 1A • Programmable Charge Termination Current • Digital Thermal Loop Charge Reduction • Less Than 0.4μA Battery Leakage Current • Programming Charge Timer

文件：905.58 Kbytes 页数：23 Pages

SKYWORKS

思佳讯