80 V, 4 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5480X. FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium pow

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飞利浦

丝印：1Y；Package：SOT89；80 V, 4 A NPN low VCEsat (BISS) transistor

FEATURES •High hFE and low VCEsat at high current operation •High collector current capability: IC maximum 4 A •High efficiency leading to less heat generation. APPLICATIONS •Medium power peripheral drivers; e.g. fan, motor •Strobe flash units for DSC and mobile phones •Inverter applicati

文件：449.46 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

NPN low VCEsat (BISS) transistor 80 V, 4 A

文件：207.17 Kbytes 页数：13 Pages

PHI

飞利浦

80 V, 4 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a SOT89 (SC-62) plastic package.\n PNP complement: PBSS5480X. • High hFE and low VCEsat at high current operation\n• High collector current capability: IC maximum 4 A\n• High efficiency leading to less heat generation.\n• AEC-Q101 qualified;

Nexperia

安世

80 V, 4 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead plastic package.\n PNP complement: PBSS5480X

Nexperia

安世

Package：TO-243AA；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 4A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 4A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司