Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5 V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.41 Kbytes 页数：5 Pages

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Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1GHz •Operating voltage 5V •Integrated stabilized bias network

文件：52.96 Kbytes 页数：4 Pages

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Silicon N-Channel MOSFET Tetrode

文件：85.55 Kbytes 页数：8 Pages

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Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5 V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.41 Kbytes 页数：5 Pages

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Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5 V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.41 Kbytes 页数：5 Pages

INFINEON

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Silicon N-Channel MOSFET Tetrode

文件：85.55 Kbytes 页数：8 Pages

INFINEON

英飞凌

Silicon N-Channel MOSFET Tetrode

文件：85.55 Kbytes 页数：8 Pages

INFINEON

英飞凌

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode•For low noise, high gain controlled input stages up to 1 GHz\n•Operating voltage 5 V\n•Integrated biasing network\n•Pb-free (RoHS compliant) package1)\n•Qualified according AEC Q101

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode•For low noise, high gain controlled input stages up to 1 GHz\n•Operating voltage 5 V\n•Integrated biasing network

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Package：TO-253-4，TO-253AA；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：MOSFET N-CH 8V 25MA SOT-143

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