Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.08 Kbytes 页数：5 Pages

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode

文件：84.5 Kbytes 页数：8 Pages

Infineon

英飞凌

RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5 V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.41 Kbytes 页数：5 Pages

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode

文件：85.55 Kbytes 页数：8 Pages

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1GHz •Operating voltage 5V •Integrated stabilized bias network

文件：52.96 Kbytes 页数：4 Pages

SIEMENS

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