10 A，100 V PNP 达林顿双极功率晶体管

The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices. • High DC Current Gain HFE = 1000 (min.) @ 5 Adc\n• Monolithic Construction with Built-in Base Emitter Shunt Resistors\n• These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free;

ONSEMI

安森美半导体

Transistor

Comset

Package：TO-218-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 60V 12A SOT93

Bourns Inc.

Package：TO-218-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 100V 10A SOT93

ONSEMI

安森美半导体