零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AP9997seriesarefromAdvancedPowerinnovateddesignandsiliconprocesstechnologytoachievethelowestpossibleon-resistanceandfastswitchingperformance.Itprovidesthedesignerwithanextremeefficientdeviceforuseinawiderangeofpowerapplications. TheTO-252packa | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
SimpleDriveRequirement | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
SimpleDriveRequirement | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AP9997seriesarefromAdvancedPowerinnovateddesignandsiliconprocesstechnologytoachievethelowestpossibleon-resistanceandfastswitchingperformance.Itprovidesthedesignerwithanextremeefficientdeviceforuseinawiderangeofpowerapplications. TheTO-252packa | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsufacemountapplication,largerheatsinkthanSO-8andSOTpackage. ▼SimpleDriveRequirement ▼Lo | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
详细参数
- 型号:
BD9997FVT
- 制造商:
ROHM
- 制造商全称:
Rohm
- 功能描述:
Silicon monolithic integrated circuits
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM |
2016+ |
BGA |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
ROHM |
2016+ |
BGA |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ROHM |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ROHM |
21+ |
BGA |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
ROHM/罗姆 |
23+ |
BGA |
15000 |
一级代理原装现货 |
询价 | ||
ROHM/罗姆 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ROHM |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ROHM/罗姆 |
23+ |
BGA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
ROHM |
14+ |
BGA |
200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ROHM/罗姆 |
24+ |
NA/ |
3389 |
原装现货,当天可交货,原型号开票 |
询价 |
相关规格书
更多- BD99A41F
- BD9C301FJ-E2
- BD9C501EFJ-E2
- BD9E102FJ-E2
- BD9G101G
- BD9G101G-TR
- BDA-2.5S12R0
- BDA230P
- BDA240P
- BD-A302ND-A
- BDA351RFE
- BD-A401
- BD-A401ND-A
- BD-A402ND-A
- BD-A403ND-A
- BD-A404NE
- BD-A405ND
- BD-A405NE
- BD-A406ND
- BD-A406ND-A
- BD-A40DND-A
- BD-A432ND
- BD-A434ND
- BD-A436ND
- BD-A501RD
- BD-A502RD
- BD-A503RD
- BD-A504RE
- BD-A505RD
- BD-A505RE
- BD-A506RD
- BD-A50DRD
- BD-A511RD
- BD-A513RD
- BD-A515RD
- BD-A516RD
- BD-A531RD
- BD-A533RD
- BD-A535RD
- BD-A536RD
- BD-A541RD
- BD-A543RD
- BD-A545RD
- BD-A546RD
- BD-A811RD
相关库存
更多- BD99A41F-E2
- BD9C401EFJ-E2
- BD9C601EFJ-E2
- BD9E151NUX-TR
- BD9G101G_EVK
- BDA1000
- BDA-2.5S12R0@]{[H
- BDA236P
- BDA242P
- BD-A304ND
- BDA351Z
- BD-A401ND
- BD-A402ND
- BD-A403ND
- BD-A404ND
- BD-A404NE-A
- BD-A405ND-A
- BD-A405NE-A
- BD-A406ND_2
- BD-A40DND
- BD-A431ND
- BD-A433ND
- BD-A435ND
- BD-A43DND
- BD-A501RD-A
- BD-A502RD-A
- BD-A503RD-A
- BD-A504RE-A
- BD-A505RD-A
- BD-A505RE-A
- BD-A506RD-A
- BD-A50DRD-A
- BD-A512RD
- BD-A514RE
- BD-A515RE
- BD-A51DRD
- BD-A532RD
- BD-A534RD
- BD-A535RE
- BD-A53DRD
- BD-A542RD
- BD-A544RE
- BD-A545RE
- BD-A54DRD
- BD-A812RD