isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

文件：102.95 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

文件：102.95 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：105.93 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

N-Channel 100 V (D-S) MOSFET

文件：1.01075 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

Simple Drive Requirement

文件：105.93 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

Power MOSFETs

APEC

富鼎先进电子