| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channeldual-gateMOS-FET DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Speciallyde | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
UHFpowertransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorinan8-leadSOT409BSMDpackagewithaceramiccap.Allleadsareisolatedfromthemountingbase. FEATURES •Emitterballastingresistorsforoptimumtemperatureprofile •Goldmetallizationensuresexcellentreliability •Internalinputm | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNPLASTICPOWERTRANSISTOR NPNPLASTICPOWERTRANSISTOR PowerLinearandSwitchingApplications | CDIL CDIL | CDIL | ||
T-5WedgeBase T-5WedgeBase TL-3/4WireTerminalLensEnd TL-3/4Micro-MidgetFlangeBaseLensEnd | CMLCML CML | CML | ||
WedgeBaseLensEnd | VCC Visual Communications Company | VCC | ||
FullandShortDataPacketFraming | CMLMICROCML Microcircuits CML公司 | CMLMICRO | ||
SampleMoreSignals,FasterandDynamically KeyFeatures •3-slotmainframeswithbuilt-in6½digitDMM •Basic0.003DCVaccuracy •9switch,RFandcontrolplug-inmodules,includinganew4-channel simultaneoussamplingdigitizer •Upto450channel/sscanrate •Upto120channelspersystem •Uptoonemillionpointsscanningm | KEYSIGHTKeysight Technologies 德科技（中国德科技（中国）有限公司 | KEYSIGHT | ||
MultilayerCeramicCapacitors(High-QCapacitors) | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
High-QCapacitors(MicrowaveChipCapacitors) | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
150mALow-DropoutLinearRegulators | GMTGlobal Mixed-mode Technology 致新科技 | GMT | ||
SurfaceMountHighPowerUltravioletLED | INOLUXInolux Corporation 英诺斯 | INOLUX | ||
1WattsDC/DCPowerConvertersSingleandDualOutputs | WALL Wall Industries Inc | WALL | ||
1WattsDC/DCPowerConvertersSingleandDualOutputs | WALL Wall Industries Inc | WALL | ||
1WattOutputPower | WALL Wall Industries Inc | WALL | ||
1WattOutputPower | WALL Wall Industries Inc | WALL |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
80V
- 最大电流允许值：
15A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD545B,BD743B,3DD68C,
- 最大耗散功率：
90W
- 放大倍数：
- 图片代号：
B-10
- vtest：
80
- htest：
999900
- atest：
15
- wtest：
90
详细参数
- 型号：
BD909
- 功能描述：
两极晶体管 - BJT NPN Power Switching
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
PNP 集电极—基极电压
- VCBO：
集电极—发射极最大电压
- VCEO：
- 40 V 发射极 - 基极电压
- VEBO：
- 6 V
- 增益带宽产品fT：
直流集电极/Base Gain hfe
- Min：
100 A
- 安装风格：
SMD/SMT
- 封装/箱体：
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CDL |
05+ |
原厂原装 |
1851 |
只做全新原装真实现货供应 |
询价 | ||
TO-220 |
10000 |
全新 |
询价 | ||||
ST |
2022 |
DIP |
450 |
原厂原装正品,价格超越代理 |
询价 | ||
ST |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
ST |
16+ |
原厂封装 |
3050 |
原装现货假一罚十 |
询价 | ||
ST |
17+ |
TO-220 |
15000 |
原装现货热卖 |
询价 | ||
ST/进口原 |
17+ |
TO-220 |
6200 |
询价 | |||
ST |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
ST/进口原 |
2022+ |
TO-220 |
5000 |
只做原装公司现货 |
询价 | ||
BOCA |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
