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BD677

中等功率 NPN 达林顿双极功率晶体管

The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications. • High DC Current GainhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc\n• Monolithic Construction\n• BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682\n• BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

BD677

Trans Darlington NPN 60V 4A 3-Pin TO-126

NJS

新泽西半导体

BD677

Transistor

Comset

BD677

Package:TO-225AA,TO-126-3;包装:散装 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN DARL 60V 4A TO126

ONSEMI

安森美半导体

BD677

Package:TO-225AA,TO-126-3;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN DARL 60V 4A SOT32-3

STMICROELECTRONICS

意法半导体

BD6775EFV

Stepping Motor Driver

Description BD6775EFV is a general-purpose stepping motor driver for OA Equipment. This drivers a bipolar type, available for 2 phase, 1-2 phase, and W1-2 phase motors. Features 1) MOS FET output(External diode is not necessary.) 2) Output OFF time is determined by external C, R valu

文件:83.33 Kbytes 页数:3 Pages

ROHM

罗姆

BD677A

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件:382.94 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

BD677A

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件:382.93 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

BD677A

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件:382.93 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

BD677A

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

文件:130.63 Kbytes 页数:3 Pages

TEL

晶体管资料

  • 型号:

    BD677(A)

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+R+Di

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    4A

  • 最大工作频率:

    >10MHZ

  • 引脚数:

    3

  • 可代换的型号:

    BD263,BD777,FD50B,2N6038,

  • 最大耗散功率:

    40W

  • 放大倍数:

    β>750

  • 图片代号:

    B-21

  • vtest:

    60

  • htest:

    10000100

  • atest:

    4

  • wtest:

    40

产品属性

  • 产品编号:

    BD677

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN - 达林顿

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    2.5V @ 30mA,1.5A

  • 电流 - 集电极截止(最大值):

    500µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    750 @ 1.5A,3V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-225AA,TO-126-3

  • 供应商器件封装:

    TO-126

  • 描述:

    TRANS NPN DARL 60V 4A TO126

供应商型号品牌批号封装库存备注价格
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货BD677即刻询购立享优惠#长期有排单订
询价
STM
15+
原厂原装
12250
进口原装现货假一赔十
询价
ST
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ST/意法
2025+
SOT-32(TO-126)
4000
原装进口价格优 请找坤融电子!
询价
ONSEMI
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
DISCRETE
50
STM
12250
询价
ON
24+
CASE77
6000
询价
ST
23+
SOT-32
5000
原装正品,假一罚十
询价
ST
23+
TO-126
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
ST
16+
TO-126
100000
全新原装现货
询价
更多BD677供应商 更新时间2026-4-11 14:13:00