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BD649

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

文件:105.89 Kbytes 页数:5 Pages

Bourns

伯恩斯

BD649

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

文件:90.32 Kbytes 页数:4 Pages

Bourns

伯恩斯

BD649

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647

文件:336.95 Kbytes 页数:5 Pages

COMSET

BD649

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain : hFE= 750(Min) @IC= 3A • Low Saturation Voltage • Complement to Type BD650 APPLICATIONS • Designed for use as complementary AF push-pull output stage applications

文件:108.25 Kbytes 页数:2 Pages

ISC

无锡固电

BD649

NPN Silicon Darlington Transistors

Eplbase power darlington transistors (62.5W) BD 643, BD 645, BD647, and BD649 are monolithic NPN Silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting

文件:74.47 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD649

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

文件:115.8 Kbytes 页数:6 Pages

POINN

BD649

Silicon NPN Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier, and analogue switching applications

文件:116.15 Kbytes 页数:4 Pages

SAVANTIC

BD649

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

文件:125.89 Kbytes 页数:4 Pages

SIEMENS

西门子

BD649

PNP SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

文件:127.08 Kbytes 页数:4 Pages

SIEMENS

西门子

BD649

NPN SILICON POWER DARLINGTONS

文件:105.89 Kbytes 页数:5 Pages

Bourns

伯恩斯

晶体管资料

  • 型号:

    BD649

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大(LF)

  • 封装形式:

    直插封装

  • 极限工作电压:

    120V

  • 最大电流允许值:

    8A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD701,BD901,BDW73C,BDX33C,BDX53C,FD50B,

  • 最大耗散功率:

    62.5W

  • 放大倍数:

  • 图片代号:

    B-10

  • vtest:

    120

  • htest:

    999900

  • atest:

    8

  • wtest:

    62.5

技术参数

  • Number of Elements per Chip:

    1

  • Minimum Operating Temperature:

    -65°C

  • Minimum DC Current Gain:

    750@3A@3V

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Continuous DC Collector Current:

    8A

  • Maximum Collector Emitter Voltage:

    100V

  • Maximum Collector Base Voltage:

    120V

  • Maximum Base Emitter Saturation Voltage:

    3@50mA@5AV

  • Configuration:

    Single

供应商型号品牌批号封装库存备注价格
ST/意法
25+
TO220F
20300
ST/意法原装特价BD649即刻询购立享优惠#长期有货
询价
24+
TO-220
10000
全新
询价
ST
17+
TO-220
6200
询价
STMicroelectronics
24+
TO-220
5000
只做原装公司现货
询价
恩XP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
POWER
23+
TO-220
25000
专做原装正品,假一罚百!
询价
FAIRCHILD
23+
TO-220
1
询价
POWER
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
询价
恩XP
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
更多BD649供应商 更新时间2025-12-24 15:05:00