首页 >BD649>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

BD649

Silicon NPN Power Transistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

BD649

SILICON DARLINGTON POWER TRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

COMSET

BD649

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min) •HighDCCurrentGain:hFE=750(Min)@IC=3A •LowSaturationVoltage •ComplementtoTypeBD650 APPLICATIONS •DesignedforuseascomplementaryAFpush-pulloutputstageapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BD649

PNP SILICON DARLINGTON TRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENS

Siemens Ltd

SIEMENS

BD649

NPN SILICON POWER DARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Inc.

伯恩斯(邦士)

Bourns

BD649

NPN SILICON POWER DARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Inc.

伯恩斯(邦士)

Bourns

BD649

NPN SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

BD649

NPN SILICON DARLINGTON TRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENS

Siemens Ltd

SIEMENS

BD649

NPN Silicon Darlington Transistors

Eplbasepowerdarlingtontransistors(62.5W) BD643,BD645,BD647,andBD649aremonolithicNPNSiliconepibasepowerdarlingtontransistorswithdiodeandresistorsinaTO220ABplasticpackage(TOP-66).Thecollectorsofthetwotransistorsareelectricallyconnectedtothemetallicmounting

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

BD649

NPN SILICON POWER DARLINGTONS

BournsBourns Inc.

伯恩斯(邦士)

Bourns

BD649

SILICON DARLINGTON POWER TRANSISTORS

COMSET

Comset Semiconductor

COMSET

BD649-S

NPN SILICON POWER DARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Inc.

伯恩斯(邦士)

Bourns

BD649F

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BD649-S

包装:卷带(TR) 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN DARL 100V 8A TO220

BournsBourns Inc.

伯恩斯(邦士)

Bourns

649

MINIATUREFUSEHOLDERS

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

649

3M??Novec??649EngineeredFluid

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M

649.S

GeneralPurposeTweezers

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

649.SA

GeneralPurposeTweezers

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

649A

PNPEpitaxialPlanarTransistors

WEITRONWEITRON

威堂電子科技

WEITRON

649H

600Hand600NHseries

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

晶体管资料

  • 型号:

    BD649

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大(LF)

  • 封装形式:

    直插封装

  • 极限工作电压:

    120V

  • 最大电流允许值:

    8A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD701,BD901,BDW73C,BDX33C,BDX53C,FD50B,

  • 最大耗散功率:

    62.5W

  • 放大倍数:

  • 图片代号:

    B-10

  • vtest:

    120

  • htest:

    999900

  • atest:

    8

  • wtest:

    62.5

详细参数

  • 型号:

    BD649

  • 功能描述:

    达林顿晶体管 62.5W NPN Silicon

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
TO-220
10000
全新
询价
FAIRCHILD
2017+
TO-220
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ST
17+
TO-220
6200
询价
STMicroelectronics
2022+
TO-220
5000
只做原装公司现货
询价
BOURNS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC
19+
TO-220F
65973
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
NXP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
POWER
23+
TO-220
25000
专做原装正品,假一罚百!
询价
NXP
21+
TO-220
12588
原装正品,自己库存 假一罚十
询价
23+
N/A
49000
正品授权货源可靠
询价
更多BD649供应商 更新时间2024-4-27 16:00:00