| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BD245 | NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD246Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd |  | |
BD245 | isc Silicon NPN Power Transistor DESCRIPTION •CollectorCurrent-IC=10A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD245;60V(Min)-BD245A 80V(Min)-BD245B;100V(Min)-BD245C •ComplementtoTypeBD246/A/B/C APPLICATIONS •Designedforuseingeneralpurposepowera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
BD245 | Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD246/A/B/C APPLICATIONS •Foruseinmediumpowerlinear andswitchingapplications | SAVANTIC Savantic, Inc. |  | |
BD245 | NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD246Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Inc. 伯恩斯（邦士） |  | |
BD245 | NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS NPNSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS Theyarethepowertransistorsforpoweramplifierandhigh-speed-switchingapplications. ThecomplementaryisBD246,A,B,C CompliancetoRoHS | COMSET Comset Semiconductor |  | |
BD245 | Silicon NPN Power Transistors | SAVANTIC Savantic, Inc. | | |
BD245 | Silicon NPN Power Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD246Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | | ||
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD246Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Inc. 伯恩斯（邦士） | | ||
isc Silicon NPN Power Transistor DESCRIPTION •CollectorCurrent-IC=10A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD245;60V(Min)-BD245A 80V(Min)-BD245B;100V(Min)-BD245C •ComplementtoTypeBD246/A/B/C APPLICATIONS •Designedforuseingeneralpurposepowera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD246/A/B/C APPLICATIONS •Foruseinmediumpowerlinear andswitchingapplications | SAVANTIC Savantic, Inc. | | ||
NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS NPNSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS Theyarethepowertransistorsforpoweramplifierandhigh-speed-switchingapplications. ThecomplementaryisBD246,A,B,C CompliancetoRoHS | COMSET Comset Semiconductor | | ||
NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS NPNSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS Theyarethepowertransistorsforpoweramplifierandhigh-speed-switchingapplications. ThecomplementaryisBD246,A,B,C CompliancetoRoHS | COMSET Comset Semiconductor | | ||
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD246Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | | ||
isc Silicon NPN Power Transistor DESCRIPTION •CollectorCurrent-IC=10A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD245;60V(Min)-BD245A 80V(Min)-BD245B;100V(Min)-BD245C •ComplementtoTypeBD246/A/B/C APPLICATIONS •Designedforuseingeneralpurposepowera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD246Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Inc. 伯恩斯（邦士） | | ||
Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD246/A/B/C APPLICATIONS •Foruseinmediumpowerlinear andswitchingapplications | SAVANTIC Savantic, Inc. | | ||
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD246Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | | ||
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD246Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Inc. 伯恩斯（邦士） | | ||
Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD246/A/B/C APPLICATIONS •Foruseinmediumpowerlinear andswitchingapplications | SAVANTIC Savantic, Inc. | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
45V
- 最大电流允许值：
10A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD213-45,BD249,BD257/45,TIP33,3DD68B,
- 最大耗散功率：
80W
- 放大倍数：
- 图片代号：
B-62
- vtest：
45
- htest：
999900
- atest：
10
- wtest：
80
详细参数
- 型号：
BD245
- 功能描述：
两极晶体管 - BJT 80W NPN Silicon
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
PNP 集电极—基极电压
- VCBO：
集电极—发射极最大电压
- VCEO：
- 40 V 发射极 - 基极电压
- VEBO：
- 6 V
- 增益带宽产品fT：
直流集电极/Base Gain hfe
- Min：
100 A
- 安装风格：
SMD/SMT
- 封装/箱体：
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
1604+ |
TSSOP-20 |
2158 |
低价支持实单,可送样品! |
询价 | |||
TO-3PN |
10000 |
全新 |
询价 | ||||
TI |
1981+ |
238 |
原装正品现货供应 |
询价 | |||
ST |
17+ |
TO-218 |
15000 |
原装现货热卖 |
询价 | ||
TOSHIBA |
23+ |
TSOP20 |
5000 |
原装正品,假一罚十 |
询价 | ||
PHI |
16+ |
T0-126 |
10000 |
全新原装现货 |
询价 | ||
TOSHIBA |
2020+ |
TSOP20 |
35000 |
公司100%原装现货,价格优势特价热卖,量大可订。 |
询价 | ||
BOURNS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
23+ |
N/A |
46080 |
正品授权货源可靠 |
询价 | |||
TI |
21+ |
35200 |
一级代理/放心采购 |
询价 |
