BD243C

Complementary Silicon Plastic Power Transistors

ComplementarySiliconPlasticPowerTransistors Thesedevicesaredesignedforuseingeneralpurposeamplifierandswitchingapplications. Features •HighCurrentGainBandwidthProduct •TheseDevicesarePb−FreeandareRoHSCompliant*

BD243C

Designed for Complementary Use with the BD244 Series

SILICONNPNPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD244Series ●65Wat25°CCaseTemperature ●6AContinuousCollectorCurrent ●10APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable ●-SSuffixAddedtoPartNumberIndicatesRoHSCompliance*

BD243C

PLASTIC POWER TRANSISTORS

BD243,243A,243B,243CNPNPLASTICPOWERTRANSISTORS BD244,244A,244B,244CPNPPLASTICPOWERTRANSISTORS

BD243C

isc Silicon NPN Power Transistor

DESCRIPTION ·DCCurrentGain-hFE=30(Min)@IC=0.3A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=45V(Min)-BD243;60V(Min)-BD243A 80V(Min)-BD243B;100V(Min)-BD243C ·ComplementtoTypeBD244/A/B/C APPLICATIONS ·Designedforuseingeneralpurpose

BD243C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheBD243BandBD243CaresiliconEpitaxial-BaseNPNtransistorsmountedinJedecTO-220plasticpackage. Theyareintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD244BandBD244Crespectively.

BD243C

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=1.5V(Max)@IC=6A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

BD243C

High Power Bipolar Transistor

Feature: •NPNplasticpowertransistors •Generalpurposeamplifierandswitchingapplications

BD243C

SEMICONDUCTORS

BD243C

Silicon NPN Power Transistor

BD243C

Complementary power transistors