BD241C数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The 3 A, 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.

特性 Features

• Collector-Emitter Saturation Voltage -VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector-Emitter Sustaining Voltage -VCEO(sus) = 80 Vdc (Min.) BD242B= 100 Vdc (Min.) BD241C, BD242C
• High Current Gain - Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO-220 AB Package
• Pb-Free Packages are Available

简介

BD241C属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的BD241C晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。