丝印：BD233；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：BD233；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：BD233；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：BD233；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

文件：193.51 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Compliant and PPAP Capable also. Note: For AEC-Q101 compliant products, please use suffix -AQ in the part number while ordering. Applications • Intended for use in Medium Power Linear Switching Applications

文件：1.20963 Mbytes 页数：5 Pages

MULTICOMP

易络盟

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件：125.97 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively

文件：38.83 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

文件：180.88 Kbytes 页数：3 Pages

WEITRON

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件：58.18 Kbytes 页数：1 Pages

TEL

东电电子