BD13810中文资料1.5 A, 60 V PNP Bipolar Power Junctions Transistor数据手册ONSEMI规格书

描述 Description

This series of plastic, medium-power PNP bipolar junction transistors are designed for use in audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

特性 Features

• Min DC Current Gain - hFE = 63 @ IC = 0.15 A
• Targeted hFE window for less variation in application
• BD136, BD138, BD140 are complementary with BD135, BD137, BD139
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

应用 Application

• Audio amplification
• Audio amplifiers

简介

BD13810属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由ONSEMI制造生产的BD13810晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。