1.5 A, 60 V NPN Power Bipolar Junction Transistor

This series of plastic, 1.5 A, 60 V NPN Power Bipolar Junction Transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • Minimum DC Current Gain - hFE = 63 @ IC = 0.15 A\n• BD135, BD137, BD139 are complementary with BD136, BD138, BD140\n• These are Pb-Free Devices;

ONSEMI

安森美半导体

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

文件：142.43 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

文件：142.43 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

文件：142.43 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 1.5A TO126-3

ONSEMI

安森美半导体

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 1.5A TO126-3

ONSEMI

安森美半导体