| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BD140 | Silicon PNP Power Transistors DESCRIPTION ·WithTO-126package ·Highcurrent ·ComplementtotypeBD135/137/139 APPLICATIONS ·Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits | SAVANTIC Savantic, Inc. |  | |
BD140 | EPITAXIAL PLANAR PNP TRANSISTOR GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:-1.5A) •DCCurrentGain:hFE=40Min.@IC=-0.15A •ComplementarytoBD139. | KECKEC CORPORATION KEC株式会社 |  | |
BD140 | Plastic Medium Power Silicon PNP Transistor PlasticMediumPowerSiliconPNPTransistor Thisseriesofplastic,medium−powersiliconPNPtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable* •DCCurrentGain−hFE=40(Min)@ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
BD140 | Complementary Silicon Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd |  | |
BD140 | PNP SILICON TRANSISTORS Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
BD140 | PNP SILICON TRANSISTOR DESCRIPTION TheUTCBD136/BD138/BD140aresiliconepitaxialplanerPNPtransistor,designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ThecomplementaryNPNtypesaretheBD135/BD137/BD139. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | |
BD140 | TO-126 Plastic-Encapsulate Transistors FEATURES HighCurrent ComplementToBD135,BD137AndBD139 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
BD140 | EPITAXIAL SILICON POWER TRANSISTORS PNPEPITAXIALSILICONPOWERTRANSISTORS DesignedforuseasAudioAmplifierandDriversUtilizing ComplementaryBD135,BD137,BD139 | CDIL CDIL |  | |
BD140 | Medium Power Linear and Switching Applications Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
BD140 | TO-126 Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES ●HighCurrent ●ComplementToBD135,BD137AndBD139 | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
BD140 | TRANSISTOR (PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | |
BD140 | Silicon PNP transistor in a TO-126F Plastic Package. Descriptions SiliconPNPtransistorinaTO-126FPlasticPackage. Features ComplementtoBD139. Applications Mediumpowerlinearandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | |
BD140 | Medium Power Linear and Switching Applications Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BD140 | PNP Epitaxial Silicon Transistor Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BD140 | Complementary low voltage transistor Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
BD140 | Medium Power Linear and Switching Applications Features •ComplementtoBD135,BD137andBD139respectively Applications MediumPowerLinearandSwitchingApplications | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BD140 | Plastic Medium Power Silicon PNP Transistor 1.5AMPEREPOWERTRANSISTORSPNPSILICON45,60,80VOLTS10WATTS ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD136,138,140arecomplementarywithBD135,137,139 | MotorolaMotorola, Inc 摩托罗拉 |  | |
BD140 | PNP power transistors DESCRIPTION PNPpowertransistorinaTO-126;SOT32plasticpackage.NPNcomplements:BD135,BD137andBD139. FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Generalpurposepowerapplications,e.g.driverstagesinhi-fiamplifiersandtelevisi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | |
BD140 | PNP SILICON TRANSISTORS POWERTRANSISTORSPNPSILICON | SIEMENS Siemens Ltd |  | |
BD140 | Medium Power Linear and Switching Applications Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
80V
- 最大电流允许值：
1.5A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD170,BD180,BD231,BD238,BD442,3CA4C,
- 最大耗散功率：
12.5W
- 放大倍数：
- 图片代号：
B-21
- vtest：
80
- htest：
999900
- atest：
1.5
- wtest：
12.5
产品属性
- 产品编号：
BD140
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
PNP
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
500mV @ 50mA，500mA
- 电流 - 集电极截止（最大值）：
100nA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
40 @ 150mA，2V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-225AA，TO-126-3
- 供应商器件封装：
TO-126
- 描述：
TRANS PNP 80V 1.5A TO126
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
23+ |
SOT-32-3 (TO-126-3) |
30000 |
询价 | |||
ST |
23+ |
TO-126 |
5515 |
进口原装现货,假一罚十,价格优惠, |
询价 | ||
CJ |
17+ |
TO-126 |
5812 |
全新原装正品s |
询价 | ||
ST专家 |
1904+ |
TO-126 |
8384 |
只做原装正品 |
询价 | ||
ST |
2021+ |
TO-126 |
5980 |
只做原装,优势渠道,可全系列订货开增值税票 |
询价 | ||
TO-251 |
22 |
原装正品现货 |
询价 | ||||
ST/意法 |
22+ |
SOT-32-3 |
44783 |
原厂原装现货 |
询价 | ||
ST/意法 |
23+ |
TO251 |
10000 |
公司只做原装正品 |
询价 | ||
STM |
21+ |
SOT-32-3 (TO-126-3) |
40000 |
原装正品 有挂有货 |
询价 | ||
ST/意法 |
21+ |
SOT-32(TO-126) |
50000 |
只做原装,支持实单! |
询价 |
