Plastic-Encapsulate MOSFETS

GENERRAL DESCRIPTION This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). FEATURE High-Side Switching Low On-Resistance Low Threshold Fast Switching Speed ESD protected APPLICATION Drivers:Relays, Solenoids, Lamps, Hammers,

文件：723.75 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network

文件：33.42 Kbytes 页数：4 Pages

SIEMENS

西门子

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network

文件：43.75 Kbytes 页数：4 Pages

SIEMENS

西门子

SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

SILICON N-CHANNEL MOSFET TETRODE • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 12V • Integrated bias Network

文件：359.34 Kbytes 页数：3 Pages

SIEMENS

西门子