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BC69-16PA

20V,2APNPmediumpowertransistors

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC69-16PA

20V,2APNPmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC69-16PAS

20V,2APNPmediumpowertransistors

Featuresandbenefits *Highcollectorcurrentcapability ICandICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC69-16PAS

20V,2APNPmediumpowertransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP69-16

PNPSiliconAFTransistor(ForgeneralAFapplicationHighcollectorcurrentHighcurrentgain)

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BCP69-16

PNPmediumpowertransistor

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.20V). APPLICATIONS •Generalpurposeswitchingandamplification •Powerapplicationssuchasaudiooutputstages.

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BCP69-16

PNPPlastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

BCP69-16

20V,2APNPmediumpowertransistors

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BCP69-16

20V,1APNPmediumpowertransistor

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BCP69-16

PNPSiliconAFTransistor

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCP69-16

20V,2APNPmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP69-16/DG

20V,1APNPmediumpowertransistor

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BCP69-16/IN

20V,1APNPmediumpowertransistor

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BCX69-16

PNPSiliconAFTransistors

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCX69-16

PNPSiliconAFTransistors

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BCX69-16

PNPSiliconAFTransistors

Features ForgeneralAFapplications. Highcollectorcurrent. Highcurrentgain. Lowcollector-emittersaturationvoltage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

BCX69-16

PNPSiliconAFTransistors

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCX69-16

PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrent)

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BCX69-16

PNPSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *Highgainandlowsaturationvoltages COMPLEMENTARYTYPE–BCX68 PARTMARKINGDETAIL–BCX69–CJ BCX69-16–CG BCX69-25–CH

Zetex

Zetex Semiconductors

详细参数

  • 型号:

    BCP69-16 T/R

  • 功能描述:

    两极晶体管 - BJT TRANS MED PWR TAPE-7

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
NXP
24+
3000
全新原装现货库存
询价
NXP
2339+
N/A
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NXP
20+
SOT223
90000
全新原装正品/库存充足
询价
NXP/恩智浦
21+
SOT-223
300
原装现货假一赔十
询价
NEXPERIA
1809+
SOT-223
6675
就找我吧!--邀您体验愉快问购元件!
询价
NXP/恩智浦
22+
SOT-223
32350
原装正品 假一罚十 公司现货
询价
NEXPERIA
23+
SOT-223
50000
全新原装正品现货,支持订货
询价
Nexperia
18+
SOT-223
998
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Nexperia
21+
SOT-223
9866
询价
NXP/恩智浦
23+
SOT-223
28000
原装正品
询价
更多BCP69-16 T/R供应商 更新时间2024-9-26 9:00:00