首页 >BCP69-16 T/R>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
20V,2APNPmediumpowertransistors Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
20V,2APNPmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,2APNPmediumpowertransistors Featuresandbenefits *Highcollectorcurrentcapability ICandICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,2APNPmediumpowertransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
PNPSiliconAFTransistor(ForgeneralAFapplicationHighcollectorcurrentHighcurrentgain) PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
PNPmediumpowertransistor DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.20V). APPLICATIONS •Generalpurposeswitchingandamplification •Powerapplicationssuchasaudiooutputstages. | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
PNPPlastic-EncapsulateTransistors | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
20V,2APNPmediumpowertransistors Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
20V,1APNPmediumpowertransistor Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
PNPSiliconAFTransistor PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
20V,2APNPmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,1APNPmediumpowertransistor Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
20V,1APNPmediumpowertransistor Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
PNPSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
PNPSiliconAFTransistors | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
PNPSiliconAFTransistors Features ForgeneralAFapplications. Highcollectorcurrent. Highcurrentgain. Lowcollector-emittersaturationvoltage. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
PNPSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrent) •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
PNPSILICONPLANARMEDIUMPOWERTRANSISTOR FEATURES *Highgainandlowsaturationvoltages COMPLEMENTARYTYPE–BCX68 PARTMARKINGDETAIL–BCX69–CJ BCX69-16–CG BCX69-25–CH | Zetex Zetex Semiconductors | Zetex |
详细参数
- 型号:
BCP69-16 T/R
- 功能描述:
两极晶体管 - BJT TRANS MED PWR TAPE-7
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP |
24+ |
3000 |
全新原装现货库存 |
询价 | |||
NXP |
2339+ |
N/A |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
NXP |
20+ |
SOT223 |
90000 |
全新原装正品/库存充足 |
询价 | ||
NXP/恩智浦 |
21+ |
SOT-223 |
300 |
原装现货假一赔十 |
询价 | ||
NEXPERIA |
1809+ |
SOT-223 |
6675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
NXP/恩智浦 |
22+ |
SOT-223 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
NEXPERIA |
23+ |
SOT-223 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Nexperia |
18+ |
SOT-223 |
998 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Nexperia |
21+ |
SOT-223 |
9866 |
询价 | |||
NXP/恩智浦 |
23+ |
SOT-223 |
28000 |
原装正品 |
询价 |
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