BC69-16PAS

20 V, 2 A PNP medium power transistors

Featuresandbenefits *Highcollectorcurrentcapability ICandICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond

BC69-16PAS

20 V, 2 A PNP medium power transistors

BC69-16PASX

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：3-UDFN 裸露焊盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 2A DFN2020D-3

BCP69-16

PNPmediumpowertransistor

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.20V). APPLICATIONS •Generalpurposeswitchingandamplification •Powerapplicationssuchasaudiooutputstages.

BCP69-16

20V,2APNPmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP69-16

20V,1APNPmediumpowertransistor

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

BCP69-16

PNPSiliconAFTransistor

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)

BCP69-16

PNPPlastic-EncapsulateTransistors

BCP69-16

20V,2APNPmediumpowertransistors

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

BCP69-16

PNPSiliconAFTransistor(ForgeneralAFapplicationHighcollectorcurrentHighcurrentgain)

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)

BCP69-16/DG

20V,1APNPmediumpowertransistor

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

BCP69-16/IN

20V,1APNPmediumpowertransistor

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

BCX69-16

PNPSiliconAFTransistors

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BCX69-16

PNPSiliconAFTransistors

BCX69-16

PNPSiliconAFTransistors

Features ForgeneralAFapplications. Highcollectorcurrent. Highcurrentgain. Lowcollector-emittersaturationvoltage.

BCX69-16

PNPSiliconAFTransistors

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BCX69-16

PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrent)

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN)

BCX69-16

PNPSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *Highgainandlowsaturationvoltages COMPLEMENTARYTYPE–BCX68 PARTMARKINGDETAIL–BCX69–CJ BCX69-16–CG BCX69-25–CH