20 V, 2 A PNP medium power transistors

General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Three current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT10

文件：266.58 Kbytes 页数：24 Pages

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丝印：BM；Package：HUSON3；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.11315 Mbytes 页数：24 Pages

NEXPERIA

安世

丝印：C2；Package：SOT1061D；20 V, 2 A PNP medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

文件：3.55399 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：C2；Package：DFN2020D-3；20 V, 2 A PNP medium power transistors

文件：1.02286 Mbytes 页数：16 Pages

NEXPERIA

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20 V, 2 A PNP medium power transistor

PNP medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. NPN complement: BC68PA. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Leadless very small SMD plastic package with medium power capability\n• AEC-Q101 qualified;

Nexperia

安世

20 V, 2 A PNP medium power transistors

PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.\n NPN complement: BC68PAS series • High collector current capability IC and ICM\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified\n• Two current gain selections\n• Leadless very small SMD plastic package with medium power capability\;

Nexperia

安世

60 V, 1 A PNP medium power transistors

PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.\n NPN complement: BC68PAS-Q series\n

Nexperia

安世

Package：3-PowerUDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 2A 3HUSON

Nexperia USA Inc.

Package：3-UDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 2A DFN2020D-3

Nexperia USA Inc.