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BC859W

PNPGENERALPURPOSETRANSISTORS

VOLTAGE30/45/65VoltsCURRENT200mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Complimentary(NPN)Devices:BC846W/BC847W/BC848W/BC849WSeries •IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BC859W

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

BC859W

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BF859

NPNhigh-voltagetransistors

IntegratedCircuits

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF859

NPNhigh-voltagetransistor

DESCRIPTION NPNtransistorsinaTO-202plasticpackage. AnA-versionwithe-b-cpinninginsteadofe-c-bisavailableonrequest. APPLICATIONS •Foruseinvideooutputstagesofblackandwhiteandcolourtelevisionreceivers.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF859

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

BLV859

UHFlinearpush-pullpowertransistor

DESCRIPTION NPNsiliconplanartransistorwithtwosectionsinpush-pullconfiguration.ThedeviceisencapsulatedinaSOT262B4-leadrectangularflangepackage,withtwoceramiccaps.ItdeliversaPosync=20Winclass-Aoperationat860MHzandasupplyvoltageof25V. FEATURES •

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BLV859

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASIBLV859isDesignedforTelevisionBandIV&VApplicationsupto860MHz. FEATURES: •CommonEmitter •PG=10dBat150W/860MHz •Omnigold™MetalizationSystem

ASI

Advanced Semiconductor

BLV859

UHFlinearpush-pullpowertransistor

DESCRIPTION NPNsiliconplanartransistorwithtwosectionsinpush-pullconfiguration.ThedeviceisencapsulatedinaSOT262B4-leadrectangularflangepackage,withtwoceramiccapsItdeliversaPosync=20Winclass-Aoperationat860MHzandasupplyvoltageof25V. FEATURES •Doublei

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

CAT859

3-PinMicroprocessorPowerSupplySupervisors

Catalyst

Catalyst Semiconductor

详细参数

  • 型号:

    BC859BW RF

  • 功能描述:

    两极晶体管 - BJT Transistor 200mW

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
NEXPERIA
1809+
SOT-323-3
16750
就找我吧!--邀您体验愉快问购元件!
询价
恩XP
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
恩XP
SOT323
3000
一级代理 原装正品假一罚十价格优势长期供货
询价
恩XP
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
PHI
2405+
原厂封装
12500
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
Nexperia USA Inc.
25+
SC-70 SOT-323
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
INFINEON
22+
N/A
8000
终端可免费供样,支持BOM配单
询价
INFINEON
23+
N/A
8000
只做原装现货
询价
INFINEON
23+
N/A
7000
询价
恩XP
23+
SOD323
50000
全新原装正品现货,支持订货
询价
更多BC859BW RF供应商 更新时间2021-9-14 10:50:00