Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G

文件：106.29 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件：469.23 Kbytes 页数：5 Pages

ETL

亚历电子

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

文件：40.8 Kbytes 页数：8 Pages

PHI

飞利浦

PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF (NPN)

文件：165.44 Kbytes 页数：8 Pages

Infineon

英飞凌

General Purpose Transistor

General Purpose Transistor RoHS Device Halogen Free Features ​​​​​​​- Ideally suited for automatic insertion - Power dissipation PCM: 0.25W (@TA=25°C) - Low current.(max. 100mA) - Collector-base voltage VCBO: BC856 = -80V BC857 = -50V BC858 = -30V

文件：163.09 Kbytes 页数：6 Pages

COMCHIP

典琦

GENERAL PURPOSE TRANSISTORS PNP SILICON

DESCRIPTION The BC856 857 858 859 A L BL/ CL are available in SOT 23 p ackage FEATURES ⚫ Moisture Sensitivity Level: 1 ⚫ ESD Rating Human Body Model: >4000 V Machine Model: >400 V ⚫ Availabl e in SOT 23 p ackage

文件：830.81 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846...-BC850... (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：136.98 Kbytes 页数：5 Pages

Infineon

英飞凌

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

文件：109.14 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

文件：211.86 Kbytes 页数：5 Pages

LRC

乐山无线电

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors PNP Silicon

文件：249.88 Kbytes 页数：8 Pages

Motorola

摩托罗拉