BC856BW

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V).

BC856BW-AQ

SMDGeneralPurposePNPTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC856BW-AU

PNPGENERALPURPOSETRANSISTORS

BC856BWG

PNPSiliconEpitaxialPlanarTransistor

BC856BW-G

SmallSignalTransistor

Features -Ideallysuitedforautomaticinsertion -ForSwitchingandAFAmplifierApplications -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:-0.1A -Collector-basevoltage VCBO:BC856W=-80V BC857W=-50V BC858W=-30V -Operatingand

BC856BWQ

65VPNPSMALLSIGNALTRANSISTORINSOT323

Features •BVCEO>-65V •IC=-100mAHighCollectorCurrent •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846BWQ) •ForSwitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Halogen-andAntimony-Free.GreenDev

BC856BW-Q

65V,100mAPNPgeneral-purposetransistors

1.Generaldescription PNPgeneral-purposetransistorsinaverysmallSOT323(SC-70),Surface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEDEC NPNcomplement BC856W-QBC846W-Q BC856AW-QBC846AW-Q BC856BW-QBC846BW-Q BC857W-QBC847W-Q BC

BC856C

SwitchingandAmplifierApplications

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

BC856C

PNPSmallSignalTransistor310mW