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BC856ALT3G

General Purpose Transistors PNP Silicon

GeneralPurposeTransistors PNPSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856ALT3G

Marking:3A;Package:SOT-23;General Purpose Transistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

FS

First Silicon Co., Ltd

BC856AMTF

Marking:9AA;Package:SOT-23;PNP Epitaxial Silicon Transistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC856AQ

Marking:3A;Package:SOT-23;PNP General Purpose Amplifier

Features ●EpoxymeetsUL-94V-0flammabilityratingandhalogenfree ●MoistureSensitivityLevel1 ●HighConductance ●Partno.withsuffix“Q”meansAEC-Q101qualified Applications ●Generalpurposeswitchingandamplification

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

BC856AQ

PNP SMALL SIGNAL TRANSISTOR IN SOT23

Features IdeallySuitedforAutomaticInsertion ComplementaryNPNTypes:BC846–BC848Family ForSwitchingandAFAmplifierApplications TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.GreenDevice(Note3) TheBC856AQ–BC857BQaresuitablefor

DIODESDiodes Incorporated

美台半导体

BC856A-Q

65 V, 100 mA NPN general-purpose transistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Twodifferentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC856AQ-7-F

Marking:xxx;Package:K3A;PNP SMALL SIGNAL TRANSISTOR IN SOT23

Features IdeallySuitedforAutomaticInsertion ComplementaryNPNTypes:BC846–BC848Family ForSwitchingandAFAmplifierApplications TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.GreenDevice(Note3) TheBC856AQ–BC857BQaresuitablefor

DIODESDiodes Incorporated

美台半导体

BC856AQB

65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC856AQB

Marking:F4;Package:DFN1110D-3;65 V, 100 mA PNP general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC856AQB-Q

65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    BC856A

  • 功能描述:

    两极晶体管 - BJT Transistor 200mW

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
恩XP
24+
标准封装
12048
全新原装正品/价格优惠/质量保障
询价
NEXPERIA/安世
25+
SOT-23
600000
NEXPERIA/安世全新特价BC856A即刻询购立享优惠#长期有排单订
询价
恩XP
16+/17+
SOT23
3500
原装正品现货供应56
询价
NEXPERIA
23+
SOT23
255000
NXP现货商!常备进口原装库存现货!
询价
恩XP
24+
SOT23
863000
一级代理/全新现货/长期供应!
询价
恩XP
24+
SOT-23
3580
原装现货/15年行业经验欢迎询价
询价
NEXPERIA
21+20
SOT23
120000
全新原装公司现货
询价
Nexperia/安世
21+
SOT-23
9000
十年信誉,只做原装,有挂就有现货!
询价
DIODES/美台
24+
SOT-23
36000
只做原厂渠道 可追溯货源
询价
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多BC856A供应商 更新时间2025-7-25 9:38:00