Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件：459.88 Kbytes 页数：5 Pages

ETL

亚历电子

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC857...-BC860...(PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

文件：881.87 Kbytes 页数：13 Pages

INFINEON

英飞凌

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

文件：51.75 Kbytes 页数：8 Pages

PHI

PHI

Small Signal Transistor

Features - Power dissipation PCM: 0.20W (@TA=25 °C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V - Operating and storage junction temperature range: TJ, TSTG= -65 to +150 °C

文件：156.63 Kbytes 页数：5 Pages

COMCHIP

典琦

GENERAL PURPOSE TRANSISTORS NPN SILICON

DESCRIPTION The BC846 AL /BL A 8 4 7 8 4 8 A L / CL are available in SOT 23 p ackage. FEATURES ⚫ H ig h current gain ⚫ E xcellent h FE linearity ⚫ L ow noise between 30Hz and 15k H z ⚫ F or A F input stages and driver applications ⚫ Availabl e in SOT 23 p ackage A PPL ICATIONS ⚫ G e

文件：888.85 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon

文件：183.42 Kbytes 页数：4 Pages

LRC

乐山无线电

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors NPN Silicon

文件：220.78 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

文件：160.4 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

文件：137.31 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

文件：178.21 Kbytes 页数：13 Pages

ONSEMI

安森美半导体