BC848B

NPNGeneralPurposeTransistor

Features 1)BVCEOminimumis30V(IC=1mA) 2)ComplementstheBC858B/BC858BW.

BC848B

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH

BC848B

NPNSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BC848B

NPNSmallSignalTransistor310mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:0.225W(Tamb=25°C)(Note1) •CollectorCurrent:0.1A •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

BC848B

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V

BC848B

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

BC848B

0.2WattsNPNPlastic-EncapsulateTransistors

Features ♦Epitaxialplanardieconstruction ♦Surfacedevicetypemounting ♦Moisturesensitivitylevel1 ♦MatteTin(Sn)leadfinishwithNickel(Ni)underplate ♦PbfreeversionandRoHScompliant ♦Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondat

BC848B

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

BC848B

SMDGeneralPurposeTransistor(NPN)

Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications

BC848B

NPNgeneralpurposeTransistor

FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification.