BC848AW

NPNSiliconEpitaxialPlanarTransistor

BC848AW-G

SmallSignalTransistor

Features -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:0.1A -Collector-basevoltage VCBO:BC846W=80V BC847W=50V BC848W=30V

BC848AW-G

SmallSignalTransistor

Features -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:0.1A -Collector-basevoltage VCBO:BC846W=80V BC847W=50V BC848W=30V

BC848AWQ

NPNGeneralPurposeAmplifier

BC848AW-TP

NPNGeneralPurposeTransistors

Features •Lowcurrent(max.100mA) •Lowvoltage(max.65V) •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1

BC848B

SurfacemountSi-EpitaxialPlanarTransistors

GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC848B

NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain)

NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP)

BC848B

GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor NPNSilicon

BC848B

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •EpitaxialDieConstruction •IdeallySuitedforAutomaticInsertion •310mWPowerDissipation •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications

BC848B

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.