BC847M

NPNgeneralpurposetransistors

DESCRIPTION NPNgeneralpurposetransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:BC857Mseries. FEATURES •Leadlessultrasmallplasticpackage(1mm×0.6mm×0.5mm) •Boardspace1.3×0.9mm •PowerdissipationcomparabletoSOT23. APPLICATIONS •Generalpu

BC847PN

COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialDieConstruction •TwoInternallyIsolatedNPN/PNPTransistorsinOnePackage •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevi

BC847PN

NPN/PNPSiliconAFTransistorArray

NPN/PNPSiliconAFTransistorArrays •ForAFinputstageanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedNPN/PNP transistorinonepackage •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

BC847PN

COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR

BC847PN

ComplementarySurfaceMountGeneralPurposeSi-PlanarTransistors

Features TwocomplementarytransistorsinonepackageGeneralPurpose ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,Switching,Amplification Commercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01

BC847PN

Multi-ChipTransistor

FEATURE •EpitaxialDieConstruction •TwointernalisolatedNPN/PNPtransistorsinonepackage •PowerDissipation PCM:0.2W(Temp.=25˚C) •CollectorCurrent ICM:0.1A •Collector-baseVoltage V(BR)CBO:50/-50V •Operating&StorageJunctionTemperature TJ,TSTG:

BC847PN

COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialDieConstruction •TwoInternallyIsolatedNPN/PNPTransistorsinonepackage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)

BC847PN

PNPandNPNSmallSignalTransistor200mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •IdeallySuitedforAutomaticInsertion •Ultra-SmallSurfaceMountPackage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponr

BC847PN

NPN/PNPSiliconAFTransistorArray(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

NPN/PNPSiliconAFTransistorArray •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedNPN/PNPTransistorsinonepackage

BC847PN

SmallSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●TwointernalisolatedNPN/PNPTransistors Inonepackage. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Idealforlowpoweramplificationandswitching.