BC847AW

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

BC847AW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC847AW

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon PbLead(Pb)-Free

BC847AW

45V,100mANPNgeneral-purposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC847AW

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

BC847AW

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

BC847AW

NPNGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA). ●Lowvoltage(max.65V).

BC847AW

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable(BC856W-BC858W) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5)

BC847AW

NPNGeneralPurposeTransistors

BC847AW

NPNGeneralPurposeTransistors

Features •Lowcurrent(max.100mA) •Lowvoltage(max.65V) •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1