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BC846A_

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES

BC846A-7

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH

DIODESDiodes Incorporated

达尔科技

DIODES

BC846ADW

Plastic-Encapsulate Transistors

FEATURES Twotransistorsinonepackage Reducesnumberofcomponentsandboardspace Nomutualinterferencebetweenthetransistors

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

BC846AE6327

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC857...-BC860...(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BC846AF

NPN general purpose transistors

DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BC846A-G

Small Signal Transistor

Features -PowerdissipationPCM:0.20W(@TA=25°C) -CollectorcurrentICM:0.1A -Collector-basevoltageVCBO:BC846=80VBC847=50VBC848=30V -Operatingandstoragejunctiontemperaturerange:TJ,TSTG=-65to+150°C

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

BC846AL

GENERAL PURPOSE TRANSISTORS NPN SILICON

DESCRIPTION The BC846AL/BLA847848AL/CLare availableinSOT23package. FEATURES ⚫Highcurrentgain ⚫ExcellenthFElinearity ⚫Lownoisebetween30Hzand15kHz ⚫ForAFinputstagesanddriverapplications ⚫AvailableinSOT23package APPLICATIONS ⚫Ge

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

BC846ALT1

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

GeneralPurposeTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

BC846ALT1

General Purpose Transistors(NPN Silicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC846ALT1

General Purpose Transistors(NPN Silicon)

GeneralPurposeTransistors NPNSilicon

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

BC846ALT1

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon

ETL

E-Tech Electronics LTD

ETL

BC846ALT1

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC846ALT1/D

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

GeneralPurposeTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

BC846ALT1D

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

GeneralPurposeTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

BC846ALT1D

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC846ALT1-D

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

GeneralPurposeTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

BC846ALT1G

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC846ALT1G

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC846ALT3

General Purpose Transistors(NPN Silicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC846ALT3G

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

详细参数

  • 型号:

    BC846A_

  • 功能描述:

    两极晶体管 - BJT TRANS GP TAPE-13

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
PHILIPS
23+
原厂封装
12300
询价
原装NXP
2017+
SOT523
54789
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ON
23+
SOT23
7635
全新原装优势
询价
PHILIPS
06+
SOT23
24000
询价
PHILIPS
16+
SOT-423
3000
原装现货假一罚十
询价
PHI
05+
原厂原装
42051
只做全新原装真实现货供应
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
PHI
22+
SC-75
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
LITEON
23+
SOT-323
8650
受权代理!全新原装现货特价热卖!
询价
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
更多BC846A_供应商 更新时间2024-4-27 15:35:00