丝印：4AT；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors

文件：406.04 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：1A；Package：SOT363；NPN Silicon Epitaxial General Purpose Transistors

文件：2.41026 Mbytes 页数：15 Pages

FUTUREWAFER

三极管 / 通用三极管

First

福斯特

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

文件：51.75 Kbytes 页数：8 Pages

PHI

飞利浦

Small Signal Transistor

Features - Power dissipation PCM: 0.20W (@TA=25 °C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V - Operating and storage junction temperature range: TJ, TSTG= -65 to +150 °C

文件：156.63 Kbytes 页数：5 Pages

COMCHIP

典琦

RoHS Device

文件：156.63 Kbytes 页数：5 Pages

COMCHIP

典琦