NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

UHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provid

文件：123.09 Kbytes 页数：12 Pages

PHI

PHI

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC556, JC557 and JC558. FEATURES • Low current max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers

文件：46.19 Kbytes 页数：8 Pages

PHI

PHI

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC556, JC557 and JC558. FEATURES • Low current max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers

文件：46.19 Kbytes 页数：8 Pages

PHI

PHI