BC546B

Si-Epitaxial PlanarTransistors

Features GeneralPurposeThreecurrentgaingroupsComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications Signalprocessing,Switching,AmplificationCommercialgrade1) MechanicalData1) (1)Tapedinammopack4000(Raster2.54) (2)Onrequest:inbulk5000(Ra

BC546B

NPN Transistor

SmallSignalProduct Features ◇ForswitchingandAFamplifierapplications ◇ThesetypesaresubdividedintothreegroupsA,BandC accordingtotheircurrentgain ◇Moisturesensitivitylevel1 ◇Drivertransistor ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)w

BC546B

TRANSISTOR (NPN)

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage VCBO:BC54680V BC54750V BC54830V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

BC546B

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

AmplifierTransistors

BC546B

Amplifier Transistors NPN Silicon

Features •Pb−FreePackagesareAvailable*

BC546B

Switching and Amplifier

Features •SwitchingandAmplifier •High-Voltage:BC546,VCEO=65V •Low-Noise:BC549,BC550 •ComplementtoBC556,BC557,BC558,BC559,andBC560

BC546B

NPN SILICON AMPLIFIER TRANSISTOR

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •ThroughHolePackage •150°CJunctionTemperature •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

BC546B

General Purpose NPN Transistors

BC546B

NPN Silicon Amplifier Transistor 625mW

BC546B

Amplifier Transistors