FDN338

P-Channel20-V(D-S)MOSFET

GeneralFEATURE ●TrenchFETPowerMOSFET ●Leadfreeproductisacquired ●Surfacemountpackage APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

FDN338P

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ·–1.6A,–20V.RDS(ON)=115mW@VGS=–4.5V RDS(ON)=155mW@VGS=

FDN338P

20VP-ChannelEnhancementModeMOSFET

VDS=-20V RDS(ON),Vgs@-4.5V,Ids@-1.6A=115mΩ RDS(ON),Vgs@-2.5V,Ids@-1.3A=155mΩ Features Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance

FDN338P

P-Channel20-V(D-S)MOSFET

Application ●Load/PowerSwitching ●InterfacingSwitching ●LogicLevelShift

FDN338P

SOT-23Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET

FDN338P

SOT-23Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

FDN338P-NL

P-Channel20-V(D-S)MOSFET

FK338

HCMOS3.3V32.768kHzSMDOscillator

FRW338

SAWResonator-RemoteControl

GBC338

NPNSILICONTRANSISTOR

Description TheGBC338isdesignedfordriveandoutput-stagesofaudioamplifiers. Features •HighDCCurrentGain:100~630@VCE=1V,IC=100mA •ComplementarytoGBC328