Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package Low RDS(on) Operated at Low Logic Level Gate Drive ESD Protected Gate Including a N-ch BC3134K and a P-ch BC3139K (independently) In a Package APPLICATION Load/ Power Switching Interfacing Switching Battery Management for Ultra Small Portable Elect

文件：421.32 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

场效应晶体管

CBI

创基电子

High Voltage Operational Amplifier

文件：228.44 Kbytes 页数：12 Pages

NSC

国半

Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz)

Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: ● High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) ● Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC =

文件：21.94 Kbytes 页数：2 Pages

NTE

SINGLE LOW-POWER OPERATIONAL AMPLIFIER

文件：114.26 Kbytes 页数：7 Pages

TI

德州仪器