General Purpose Transistors

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ETCList of Unclassifed Manufacturers

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Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage fast rectification diode

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VISHAYVishay Siliconix

威世威世科技公司

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications s

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NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体