BC2302

Marking：2302；Package：SOT23；Plastic-Encapsulate MOSFETS

Description TheBC2302usesadvancedtrenchtechnologytoprovideexcellentR lowgatechargeandoperationwithgatevoltagesaslowas2.5V. ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. DS(ON), Application Batteryprotection Loadswitch Uni

BC2302ET

Marking：S2；Package：SOT-523；N-Channel MOSFET

Feature ⚫20VN-ChannelMOSFETHighDenseDesign. ⚫RDS(ON)=280m(typ.)@VGS=4.5V ⚫RDS(ON)=360m(typ.)@VGS=2.5V ⚫ReliableandRugged ⚫ESDProtected Applications ⚫PortableEquipmentandBatteryPowerSystems

BC2302W

Marking：2302；Package：SOT-323；Plastic-Encapsulate MOSFETS

FEATURE ⚫TrenchFETPowerMOSFET APPLICATIONS ⚫LoadSwitchforPortableDevices ⚫DC/DCConverter

BLM2302

N-ChannelEnhancementModePowerMOSFET

BM2302

N-Channel1.25-W,2.5-VMOSFET

BU2302

CRtimer

BU2302F

CRtimer

CES2302

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.0A,RDS(ON)=72mΩ@VGS=4.5V. RDS(ON)=110mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2302

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

CES2302A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,4.4A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.