P-Channel Enhancement Mode Power MOSFET

Features ⚫ Surface mount package ⚫ High power and current handing capability ⚫ VDS= -12V,ID= -6A RDS(on)

文件：991.76 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Amplifier Transistors TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with T

文件：359.21 Kbytes 页数：5 Pages

CDIL

Amplifier Transistors

Amplifier Transistors NPN Silicon

文件：112.19 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of audio amplifiers.

文件：219.56 Kbytes 页数：1 Pages

DCCOM

道全

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Amplifier dissipation NPN Silicon

文件：1.12108 Mbytes 页数：4 Pages

JIANGSU

长电科技

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Amplifier dissipation NPN Silicon

文件：1.12108 Mbytes 页数：4 Pages

JIANGSU

长电科技

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：228.49 Kbytes 页数：4 Pages

MICRO-ELECTRONICS

Switching and Amplifier Applications

NPN Epitaxial Silicon Transistor Switching and Amplifier Applications • Low Noise: BC239

文件：115.15 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain.

文件：138.87 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.35 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: BC237 50V BC238/239 30V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

文件：157.26 Kbytes 页数：2 Pages

WINNERJOIN

永而佳